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| SMD Type NPN Silicon Epitaxial Transistor 2SC2946 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features High Votage VCEO=200V +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 High speed tf is 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current *1 Total Power dissipation Ta = 25 Junction temperature Storage temperature *1 PW 10ms, Duty cycle 50% *2 Symbol VCBO VCEO VEBO ICP IC PT Tj Tstg Rating 330 200 7 2 4 2 150 -55 to +150 Unit V V V A A W *2 when mounted on ceramic substrate of 7.5cm2X0.7mm 3.80 www.kexin.com.cn 1 SMD Type 2SC2946 Electrical Characteristics Ta = 25 Parameter collector cutoff current emitter cutoff current DC current Gain * Collector Saturation Voltage * Base Satruation Voltage * Turn-on Time Storage Time Fall Time * Pulsed:PW 350is,Duty Cycle 2% Symbol ICBO IEBO hFE VCE(sat) VBE(sat) ton tstg tf see Test circuit Testconditons VCB=250V,IE=0 VEB=5V,IC=0 VCE=5V,IC=100mA VCE=5V,IC=1A IC=1A,IB=0.1A IC=1A,IB=0.1A 20 15 Min Transistors Typ Max 1 1 Unit iA iA 60 160 1 1.5 1 2 1 V V is Switching Time(ton,tstg,tr) Test Circuit hFE Classification Marking hFE N 20 to 50 M 30 to 70 L 50 to 100 K 80 to 160 2 www.kexin.com.cn |
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